REVISED CALCULATION OF POINT-DEFECT EQUILIBRIA AND NONSTOICHIOMETRY IN GALLIUM-ARSENIDE

被引：161
|
作者：
HURLE, DTJ
机构：
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1979年 / 40卷 / 08期
关键词：
D O I：
10.1016/0022-3697(79)90170-7
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：613 / 626
页数：14
相关论文
共 50 条
  • [41] THE INVESTIGATION OF POINT-DEFECTS IN GALLIUM-ARSENIDE DOPED WITH ISOVALENT IMPURITIES
    ANASTASYEVA, NA
    BUBLIK, VT
    GRIGORYEV, YA
    GRISHINA, SP
    MILVIDSKY, MG
    OSVENSKY, VB
    LOSHINSKY, AM
    KRISTALLOGRAFIYA, 1982, 27 (06): : 1140 - 1142
  • [42] CALCULATION OF POINT-DEFECT RELAXATION VOLUME IN MICROSCOPIC MODEL
    KOSTROMIN, BF
    PLISHKIN, YM
    PODCHINENOV, IY
    FIZIKA METALLOV I METALLOVEDENIE, 1981, 51 (03): : 468 - 472
  • [43] CLUSTER-BETHE-LATTICE TREATMENT OF THE SILICON PAIR DEFECT IN GALLIUM-ARSENIDE
    KLEINERT, P
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 117 (02): : K91 - K94
  • [44] CHARACTERISTICS OF DEFECT FORMATION IN EPITAXIAL GALLIUM-ARSENIDE CONTAINING INDIUM ISOVALENT IMPURITIES
    KOLCHENKO, TI
    LOMAKO, VM
    RODIONOV, AV
    SVESHNIKOV, YN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (04): : 391 - 393
  • [45] An extended computational approach for point-defect equilibria in semiconductor materials
    Ogawa, Takafumi
    Taguchi, Ayako
    Kuwabara, Akihide
    NPJ COMPUTATIONAL MATERIALS, 2022, 8 (01)
  • [46] CALCULATION OF POINT-DEFECT COMPLEX-FORMATION ENERGY
    SALAMATOV, YI
    MURTAZIN, IA
    FIZIKA METALLOV I METALLOVEDENIE, 1986, 61 (03): : 613 - 615
  • [47] THE CALCULATION OF THE EFFECT OF POINT-DEFECT TRAPPING ON VOID GROWTH
    FISHER, SB
    MADDEN, PK
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 69 (01): : 257 - 268
  • [48] DEFECT REACTIONS BY HEAT-TREATMENT OF HEAVILY SILICON DOPED GALLIUM-ARSENIDE
    OKADA, Y
    FUJII, K
    ORITO, F
    MUTO, S
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (04) : 1675 - 1680
  • [49] DFT calculation of EPR parameters of antisite defect in gallium arsenide
    Esteves, Marcos C.
    Rocha, Alexandre B.
    Vugman, Ney V.
    Bielschowsky, Carlos E.
    CHEMICAL PHYSICS LETTERS, 2008, 453 (4-6) : 188 - 191
  • [50] IMPURITY-DEFECT INTERACTION IN GALLIUM-ARSENIDE DOPED BY IMPLANTATION OF TELLURIUM IONS
    ZELEVINSKAYA, VM
    KACHURIN, GA
    SMIRNOV, LS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1209 - 1210
12345