LOCALIZED MELTING INDUCED BY RAPID ANNEALING CORRELATED WITH THE SPACE DISTRIBUTION OF A-TYPE MICRODEFECTS IN SILICON CZOCHRALSKI-GROWN WAFERS

被引：0

作者：

USENKO, AY

机构：

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1993年 / 4卷 / 01期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that when a standard polished single-crystalline silicon wafer is heated uniformly by light pulses from a xenon flashlamp, anisotropic melting at localized places is caused by nucleation in the bulk and the melting nuclei are A-type microdefects.

引用

页码：89 / 92

页数：4

共 42 条

[31] Characterization of the initial rapid decay on light-induced carrier lifetime and cell performance degradation of Czochralski-grown silicon
Hashigami, H
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (5A): : 2564 - 2568
[32] Characterization of the initial rapid decay on light-induced carrier lifetime and cell performance degradation of Czochralski-grown silicon
Hashigami, Hiroshi
Dhamrin, Marwan
Saitoh, Tadashi
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (5 A): : 2564 - 2568
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TRIPOSHINA, NA
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KRISTALLOGRAFIYA, 1983, 28 (06): : 1222 - 1224
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1600, American Inst of Physics, Woodbury, NY, USA (77):
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Fahrner, W. R.
APPLIED PHYSICS LETTERS, 2006, 89 (03)
[36] Charged particle activation analysis study of the oxygen outdiffusion from Czochralski-grown silicon during classical and rapid thermal annealing in various gas ambient
1600, (74):
[37] Vacancy-related microdefects responsible for the formation of oxidation-induced stacking faults with ring-shaped distribution (R-OSFs) in Czochralski-grown Si
Puzanov, NI
Eidenzon, AM
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (08) : 991 - 997
[38] CHARGED-PARTICLE ACTIVATION-ANALYSIS STUDY OF THE OXYGEN OUTDIFFUSION FROM CZOCHRALSKI-GROWN SILICON DURING CLASSICAL AND RAPID THERMAL ANNEALING IN VARIOUS GAS AMBIENT
MADDALONVINANTE, C
BARBIER, D
ERRAMLI, H
BLONDIAUX, G
JOURNAL OF APPLIED PHYSICS, 1993, 74 (10) : 6115 - 6119
[39] DISTRIBUTION OF SIO2 PRECIPITATES IN LARGE, OXYGEN-RICH CZOCHRALSKI-GROWN SILICON SINGLE-CRYSTALS AFTER ANNEALING AT 750-DEGREES-C
BOUCHARD, R
SCHNEIDER, JR
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NAGASAWA, H
ZULEHNER, W
JOURNAL OF APPLIED PHYSICS, 1995, 77 (02) : 553 - 562
[40] INTERCONNECTION OF THE DISTRIBUTION OF GROWTH AND THERMALLY INDUCED MICRODEFECTS WITH IMPURITY DISTRIBUTION IN DISLOCATION-FREE SILICON GROWN BY THE CZOCHRALSKI METHOD UNDER THE ACTION OF A CONSTANT MAGNETIC-FIELD ON THE MELT
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PUZANOV, NI
KALYUZHNAYA, SI
KRISTALLOGRAFIYA, 1990, 35 (02): : 433 - 439

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