SURFACE-STRUCTURE AND INTERFACE FORMATION OF SI ON GAAS(100)

被引：26
|
作者：
BACHRACH, RZ
BRINGANS, RD
OLMSTEAD, MA
UHRBERG, RIG
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期
关键词：
D O I：
10.1116/1.583742
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1135 / 1140
页数：6
相关论文
共 50 条
  • [41] SURFACE-STRUCTURE TRANSITIONS ON INAS(001) AND GAAS(001) SURFACES
    YAMAGUCHI, H
    HORIKOSHI, Y
    PHYSICAL REVIEW B, 1995, 51 (15): : 9836 - 9854
  • [42] INTERFACE FORMATION AND GROWTH OF INSB ON SI(100)
    FRANKLIN, GE
    RICH, DH
    HONG, HW
    MILLER, T
    CHIANG, TC
    PHYSICAL REVIEW B, 1992, 45 (07): : 3426 - 3434
  • [43] THEORETICAL AND EXPERIMENTAL-STUDY OF THE NA/SI(100)2X1 SURFACE-STRUCTURE
    SPIESS, L
    TANG, SP
    FREEMAN, AJ
    DELLEY, B
    MANGAT, PS
    SCHIRM, KM
    HURYCH, Z
    SOUKIASSIAN, P
    APPLIED SURFACE SCIENCE, 1993, 65-6 : 690 - 696
  • [44] INDIUM OVERLAYERS ON CLEAN SI(100)2 X-1 - SURFACE-STRUCTURE, NUCLEATION, AND GROWTH
    KNALL, J
    SUNDGREN, JE
    HANSSON, GV
    GREENE, JE
    SURFACE SCIENCE, 1986, 166 (2-3) : 512 - 538
  • [45] INTERACTION BETWEEN ADSORBED POTASSIUM ATOMS ON A SI(100)2X1 SURFACE AND CHEMISORPTION SURFACE-STRUCTURE
    ZHOU, XY
    SHI, DH
    CAO, PL
    CHINESE PHYSICS, 1992, 12 (02): : 433 - 437
  • [46] SURFACE-STRUCTURE OF (NH4)2SX-TREATED GAAS (100) IN AN ATOMIC-RESOLUTION
    YOKOI, N
    ANDOH, H
    TAKAI, M
    APPLIED PHYSICS LETTERS, 1994, 64 (19) : 2578 - 2580
  • [47] GROWTH MODE AND INTERFACE FORMATION OF SB ON GAAS(100)
    RESCHESSER, U
    FROTSCHER, U
    ESSER, N
    ROSSOW, U
    RICHTER, W
    SURFACE SCIENCE, 1994, 307 : 597 - 602
  • [48] The influence of a selenium interlayer on the In/GaAs(100) interface formation
    Hohenecker, S
    Drews, D
    Lubbe, M
    Zahn, DRT
    Braun, W
    APPLIED SURFACE SCIENCE, 1998, 123 : 585 - 589
  • [49] Formation and chemical reaction of Mn/GaAs (100) interface
    Zhang, Ming
    Dong, Guosheng
    Li, Zheshen
    Xu, Min
    Jin, Xiaofeng
    Wang, Xun
    Zhu, Xingguo
    Wuli Xuebao/Acta Physica Sinica, 1993, 42 (08): : 1333 - 1339
  • [50] Formation energy, lattice relaxation, and electronic structure of Al/Si/GaAs(100) junctions
    Berthod, C
    Binggeli, N
    Baldereschi, A
    PHYSICAL REVIEW B, 1998, 57 (16): : 9757 - 9762
12345