(110) SURFACE-STATES OF GAAS AND MATRIX ELEMENT EFFECTS IN ANGLE-RESOLVED PHOTOEMISSION

被引：44

作者：

CHADI, DJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.569746

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The relaxed (110) surface electronic structure of GaAs is calculated within the tight-binding model. The symmetry and dispersion of the surface states are compared to those measured by angle-resolved photoemission experiments. Variations in photoemission intensity with measurement geometry are related to matrix-element modulation effects and it is shown that angle-resolved measurements can give information on the symmetry of surface states.

引用

页码：1244 / 1248

页数：5

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