SUPERLUMINESCENT DIODES WITH ANGLED FACET ETCHED BY CHEMICALLY ASSISTED ION-BEAM ETCHING

被引：18

作者：

LIN, CF

机构：

[1] School of Electrical Engineering, Cornell University, Ithaca

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 11期

关键词：

DIODES; LUMINESCENT DEVICES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19910604

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A superluminescent diode with very low spectral modulation has been made with one cleaved facet and one angled facet etched by chemically assisted ion beam etching. Without antireflection coating, the reflection of light back into the waveguide from the etched angled facet is less than 1 x 10(-5). In addition, 85% of the total output power can be coupled from the etched angled facet without applying any anti-reflection or high-reflection coating on either facet.

引用

页码：968 / 970

页数：3

共 50 条

[11] CHEMICALLY ASSISTED ION-BEAM ETCHING FOR SILICON-BASED MICROFABRICATION
CHIEH, YS
KRUSIUS, JP
CHAPMAN, P
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (06) : 1585 - 1589
[12] ION-BEAM ASSISTED ETCHING OF SEMICONDUCTORS
ZALM, PC
VACUUM, 1986, 36 (11-12) : 787 - 797
[13] ION-BEAM ASSISTED ETCHING AND DEPOSITION
GAMO, K
NAMBA, S
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06): : 1927 - 1931
[14] Comparison of the etching behavior of GaAs and GaN in a chemically-assisted ion-beam etching system
Department of Optoelectronics, University of Ulm, D-89069 Ulm, Germany
Microelectron Eng, 1 (323-326):
[15] ION-BEAM ASSISTED ETCHING.
Kireev, V.Yu.
Nazarov, D.A.
Kuznetsov, V.I.
Soviet surface engineering and applied electrochemistry, 1986, (06): : 52 - 57
[16] REACTIVE AND CHEMICALLY ASSISTED ION-BEAM ETCHING OF SI AND SIO2
CARTER, MA
GOLDSPINK, GF
VACUUM, 1988, 38 (01) : 5 - 10
[17] Comparison of the etching behavior of GaAs and GaN in a chemically-assisted ion-beam etching system
Eberhard, F
Schauler, M
Deichsel, E
Kirchner, C
Unger, P
MICROELECTRONIC ENGINEERING, 1999, 46 (1-4) : 323 - 326
[18] RAMAN-SCATTERING STUDY OF DRY ETCHING OF GAAS - A COMPARISON OF CHEMICALLY ASSISTED ION-BEAM ETCHING AND REACTIVE ION ETCHING
GLEMBOCKI, OJ
DOBISZ, EA
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02): : 1403 - 1407
[19] NOVEL PRECURSORS FOR CHEMICALLY ASSISTED ION-BEAM ETCHING - REACTIONS OF DICHLOROETHANE ON GAAS(100)
MARSHALL, D
JACKMAN, RB
VACUUM, 1993, 44 (3-4) : 249 - 256
[20] MASKING CONSIDERATIONS IN CHEMICALLY ASSISTED ION-BEAM ETCHING OF GAAS/ALGAAS LASER STRUCTURES
BEHFARRAD, A
WONG, SS
DAVIS, RJ
WOLF, ED
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (03) : 779 - 782

← 1 2 3 4 5 →