共 50 条
- [1] ELASTIC ELECTRON SCATTERING IN INSB-TYPE SEMICONDUCTORS PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1971, 45 (02): : 415 - +
- [3] INELASTIC-SCATTERING OF ELECTRONS BY OPTIC PHONONS IN INSB-TYPE SEMICONDUCTORS PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1978, 88 (01): : 247 - 260
- [5] SCATTERING OF CONDUCTION ELECTRONS BY MAGNETIC-IMPURITIES IN SEMICONDUCTORS OF INSB-TYPE AND HGTE-TYPE BAND-STRUCTURE PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1975, 72 (01): : 359 - 367
- [6] ONE-PHOTON AND 2-PHOTON MAGNETOOPTICAL TRANSITIONS IN INSB-TYPE SEMICONDUCTORS JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (18): : 3459 - 3466
- [7] INVESTIGATION OF POSSIBILITY OF SUBMILLIMETER ELECTROMAGNETIC OSCILLATIONS GENERATION IN CYCLOTRON FREQUENCY IN INSB-TYPE SEMICONDUCTORS RADIOTEKHNIKA I ELEKTRONIKA, 1976, 21 (08): : 1695 - 1701
- [8] DIAMAGNETIC EXCITONS IN INSB-TYPE CRYSTALS SOVIET PHYSICS SOLID STATE,USSR, 1972, 13 (10): : 2425 - &
- [9] THRESHOLD ENERGIES OF IMPACT IONIZATION AND OF INCREASE IN QUANTUM EFFICIENCY OF PHOTOCONDUCTIVITY IN INSB-TYPE DEGENERATE SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (10): : 1593 - &