EFFECT OF LOW-LEVEL BORON DOPING AND ITS IMPLICATION TO THE NATURE OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON

被引：33
|
作者：
YANG, LY
CATALANO, A
ARYA, RR
BALBERG, I
机构：
[1] Solarex Thin Film Division, Newtown, PA 18940
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 09期
关键词：
D O I：
10.1063/1.103401
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Large simultaneous changes in ambipolar diffusion length (Ld) and photoconductivity (σph) were observed with boron doping below 1 ppm. The results can be explained satisfactorily by postulating that electrons and holes interchange their roles as majority or minority carriers at ∼0.4 ppm. The μτ products for both carriers are determined as a function of doping. The light intensity dependences of Ld and σph present new evidence for the existence of the hole trapping centers in a-Si:H and show that doping enhances the sensitizing effect due to these centers.
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页码：908 / 910
页数：3
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