REDUCTION OF EXCESS SELF-INTERSTITIALS IN SILICON BY GERMANIUM AND SILICON IMPLANTATION-INDUCED DAMAGE

被引：2
|
作者：
FAHEY, P
机构：
来源：
ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS | 1989年 / 147卷
关键词：
D O I：
10.1557/PROC-147-61
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：61 / 72
页数：12
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