INFLUENCE OF DOPING GALLIUM-PHOSPHIDE CRYSTALS WITH SILICON AND GERMANIUM ON THE CURRENT-VOLTAGE CHARACTERISTICS OF NI-N-GAP STRUCTURES

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作者：
IVASHCHENKO, AI
SAMORUKOV, BE
SLOBODCHIKOV, SV
SOLOMONOV, AI
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 04期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：451 / 453
页数：3
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