共 50 条
- [1] RADIATIVE RECOMBINATION IN HEAVILY DOPED P-TYPE GERMANIUM PHYSICAL REVIEW B, 1984, 30 (12): : 7030 - 7036
- [2] GALVANOMAGNETIC EFFECTS IN HEAVILY DOPED P-TYPE GERMANIUM PHYSICAL REVIEW, 1964, 133 (4A): : 1207 - +
- [5] ELECTRONIC RAMAN-SCATTERING IN HEAVILY DOPED P-TYPE GERMANIUM PHYSICAL REVIEW B, 1985, 32 (12): : 8071 - 8077
- [6] THERMAL WIDTH OF FORBIDDEN BAND IN HEAVILY DOPED P-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (01): : 72 - &
- [7] ELECTRICAL PROPERTIES OF HEAVILY DOPED P-TYPE GERMANIUM CONTAINING BERYLLIUM SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (11): : 2764 - &
- [8] PHOTOLUMINESCENCE OF COMPLEXES IN EPITAXIAL P-TYPE GAAS HEAVILY DOPED WITH GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (05): : 491 - 492
- [10] CHARACTERISTICS OF DISTRIBUTION OF DENSITY OF STATES IN HEAVILY DOPED P-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (04): : 393 - 397