PIEZOELECTRIC EFFECT IN STRAINED CDTE-BASED HETEROSTRUCTURES

被引：1
|
作者：
CIBERT, J [1 ]
ANDRE, R [1 ]
DANG, LS [1 ]
机构：
[1] UNIV GRENOBLE 1,F-38402 ST MARTIN DHERES,FRANCE
来源：
ACTA PHYSICA POLONICA A | 1995年 / 88卷 / 04期
关键词：
D O I：
10.12693/APhysPolA.88.591
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Strained III-V or II-VI heterostructures grown along a polar axis incorporate a piezoelectric field which strongly alters their electronic properties. We review some experimental studies of this built-in field, and its consequences, in CdTe-CdMnTe and CdTe-CdZnTe heterostructures. This includes: (i) the measure of the built-in field, with as an example the dependence of the piezoelectric coefficient on bond length; (ii) the description of the exciton formed by an electron and a hole which can be continuously separated in space by the piezoelectric field; (iii) some examples of the extreme sensitivity to any additional electric field.
引用
收藏
页码：591 / 600
页数：10
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