COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS

被引：141

作者：

CASEY, HC

PANISH, MB

机构：

[1] Bell Telephone Laboratories, Incorporated, Murray Hill

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 12期

关键词：

D O I：

10.1063/1.1657312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoresponse measurements were made to determine the compositional dependence of the Ga1-xAlxAs direct Γ 15→Γ1 and indirect Γ15→ X1 energy gaps. These data, together with other information, show that the crossover composition and energy gap are between 0.35<x c<0.40 and 1.87<Egc<1.97 eV, and that the most resonable values are 0.37 and 1.92 eV. © 1969 The American Institute of Physics.

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页码：4910 / &

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