LOW-TEMPERATURE DEPENDENCE OF THE HOLE IMPACT IONIZATION-CONSTANTS DETERMINED FROM PMOS TRANSISTORS

被引：2
|
作者：
DEEN, MJ
ZUO, ZP
机构：
[1] School of Engineering Science, Simon Fraser University, Burnaby, BC
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 23期
关键词：
Ionisation; Metal-oxide-semiconductor structures and devices;
D O I：
10.1049/el:19901277
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Results on the variation of the hole impact ionisation constants Ai and Bi, with temperature are presented. Ai and Bi were determined using a substrate current model for MOS devices. It was found that for our PMOS devices, Ai and Bi both decrease with temperature. © 1990, The Institution of Electrical Engineers. All rights reserved.
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页码：1975 / 1977
页数：3
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