THEORETICAL-MODELS FOR THE ELECTRONIC-STRUCTURES OF HYDROGENATED AMORPHOUS-SILICON

被引：49
|
作者：
JOHNSON, KH [1 ]
KOLARI, HJ [1 ]
DENEUFVILLE, JP [1 ]
MOREL, DL [1 ]
机构：
[1] EXXON RES & ENGN CO,LINDEN,NJ 07036
来源：
PHYSICAL REVIEW B | 1980年 / 21卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.21.643
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：643 / 647
页数：5
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