ANTIREFLECTIVE COATING FOR DEEP UV LITHOGRAPHY PROCESS ENHANCEMENT

被引:6
|
作者
BARNES, GA [1 ]
FLAIM, TD [1 ]
JONES, SK [1 ]
DUDLEY, BW [1 ]
KOESTER, DA [1 ]
PETERS, CR [1 ]
BOBBIO, SM [1 ]
机构
[1] MCNC CTR MICROELECTR,RES TRIANGLE PK,NC 27709
来源
POLYMER ENGINEERING AND SCIENCE | 1992年 / 32卷 / 21期
关键词
D O I
10.1002/pen.760322106
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
We describe here performance enhancements provided by an anti-reflective coating (ARC), developed for deep UV applications. The reduction in substrate reflections provided by the ARC layer results in significant increases in resolution capability and process latitude compared to single layer deep UV resist. Increased linewidth control and patterning capability for highly reflective, grainy, and topographical substrates is demonstrated.
引用
收藏
页码:1578 / 1582
页数:5
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