ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY

被引：99
|
作者：
DAVIES, GJ
HECKINGBOTTOM, R
OHNO, H
WOOD, CEC
CALAWA, AR
机构：
[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
[2] MIT,LINCOLN LAB,LEXINGTON,MA 02173
来源：
APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 03期
关键词：
D O I：
10.1063/1.91910
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：290 / 292
页数：3
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