HEAT-TREATMENT EFFECTS OF ZNO-AL THIN-FILMS PREPARED BY FACING-TARGET-TYPE SPUTTERING METHOD

被引：9
|
作者：
KONISHI, R
NODA, K
SASAKURA, H
机构：
[1] Department of Electrical Engineering and Electronics, Tottori University, Tottori, 680, Koyama
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 03期
关键词：
ZNO-AL FILM; TRANSPARENT ELECTRODE; SPUTTERING; X-RAY DIFFRACTION; HALL MOBILITY; CARRIER CONCENTRATION; RESISTIVITY;
D O I：
10.1143/JJAP.30.567
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
ZnO:Al films were deposited by a facing-target-type method on a glass substrate, which is held at 300-degrees-C. The minimum resistivity was obtained with an Al concentration of 1.3%. The decrease of resistivity after the heat treatment of ZnO:Al (1.3%; calculated from area ratio of target) film seems to be mainly attributed to the increase of Hall mobility. The improvement of Hall mobility is not due to the improvement of crystallinity, but it may be due to the decrease of oxygen impurities at interstitial sites.
引用
收藏
页码：567 / 568
页数：2
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