HETEROJUNCTION BIPOLAR-TRANSISTORS WITH SI(1-X)GE(X) BASE

被引：11
|
作者：
PRUIJMBOOM, A
TIMMERING, CE
VANROOIJMULDER, JML
GRAVESTEIJN, DJ
DEBOER, WB
KERSTEN, WJ
SLOTBOOM, JW
VRIEZEMA, CJ
DEKRUIF, R
机构：
[1] Philips Research Laboratories, 5600JA Eindhoven
来源：
MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(92)90468-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Mesa-isolated bipolar transistors with strained Si1-xGex-base layers, grown by molecular beam epitaxy end atmospheric pressure chemical vapour deposition, have been fabricated. Results of structural and electrical analysis of transistors with implanted emitters and with phosphorus and arsenic-doped polysilicon emitters are presented.
引用
收藏
页码：427 / 434
页数：8
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