LOW-THRESHOLD 0.98-MU-M ALUMINUM-FREE STRAINED-QUANTUM-WELL INGAAS/INGAASP/INGAP LASERS

被引：60

作者：

CHANGHASNAIN, CJ

BHAT, R

LEBLANC, H

KOZA, MA

机构：

[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305

[2] BELLCORE,RED BANK,NJ 07701

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 01期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19930001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Aluminium-free strained-quantum-well In0.2Ga0.8As lasers employing novel two-stepped InGaAsP confinement layers and InGaP cladding layers on a GaAs substrate are demonstrated for the first time. Threshold current density as low as 58 A/cm2 is obtained with broad stripe lasers. This threshold current density is, to the authors' knowledge, the lowest reported for 0.98 mum lasers grown by organic chemical vapour deposition.

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页码：1 / 2

页数：2

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