FORMATION OF VERY THIN OXIDE FILMS ON METALS - CONTACT POTENTIAL MEASUREMENTS DURING OXIDATION OF (100) CU

被引：11
作者：
BOGGIO, JE
机构：
来源：
JOURNAL OF CHEMICAL PHYSICS | 1970年 / 53卷 / 09期
关键词：
D O I：
10.1063/1.1674530
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
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页码：3544 / &
相关论文
共 40 条
[1]   PRESSURE DEPENDENCE OF OXIDATION OF ALUMINUM AT 298 DEGREES K [J].
BOGGIO, JE .
SURFACE SCIENCE, 1969, 14 (01) :1-&
[2]   THEORY OF FORMATION OF VERY THIN OXIDE FILMS ON METALS [J].
BOGGIO, JE ;
PLUMB, RC .
JOURNAL OF CHEMICAL PHYSICS, 1966, 44 (03) :1081-&
[3]  
CABRERA N, 1947, CR HEBD ACAD SCI, V224, P1713
[4]  
CABRERA N, 1949, PHILOS MAG, V40, P175
[5]  
Cabrera N., 1949, REP PROG PHYS, V12, P308
[6]   OXIDATION OF (112) FACE OF TUNGSTEN [J].
CHANG, CC ;
GERMER, LH .
SURFACE SCIENCE, 1967, 8 (1-2) :115-&
[7]   ADSORPTION AND OXIDE FORMATION ON ALUMINIUM FILMS [J].
ELEY, DD ;
WILKINSON, PR .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1960, 254 (1278) :327-342
[8]   CHEMISORPTION OF HYDROGEN ON TUNGSTEN (100) [J].
ESTRUP, PJ ;
ANDERSON, J .
JOURNAL OF CHEMICAL PHYSICS, 1966, 45 (06) :2254-&
[9]   APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J].
FARNSWORTH, HE ;
SCHLIER, RE ;
GEORGE, TH ;
BURGER, RM .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) :1150-1161
[10]   SCHOTTKY EMISSION AS A RATE-LIMITING FACTOR IN THERMAL OXIDATION OF METALS [J].
FROMHOLD, AT ;
COOK, EL .
PHYSICAL REVIEW LETTERS, 1966, 17 (24) :1212-&
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