STEEP VS EXPONENTIAL ABSORPTION-EDGE IN AMORPHOUS GERMANIUM - EVIDENCE FOR EFFECT OF OXYGEN

被引：18

作者：

ZAVETOVA, M

ZEMEK, J

KOC, S

机构：

来源：

CZECHOSLOVAK JOURNAL OF PHYSICS SECTION B | 1972年 / B 22卷 / 05期

关键词：

D O I：

10.1007/BF01690706

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：429 / &

共 50 条

[1] EXPONENTIAL ABSORPTION-EDGE IN AMORPHOUS GE-SE COMPOUNDS
OHEDA, H
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (10) : 1973 - 1978
[2] EFFECT OF HYDROSTATIC-PRESSURE ON DIRECT ABSORPTION-EDGE OF GERMANIUM
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[3] SOME DIFFERENCES IN EXPONENTIAL TAIL BEHAVIOR OF FUNDAMENTAL ABSORPTION-EDGE IN AMORPHOUS AND CRYSTALLINE MATERIALS
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[4] EXPONENTIAL ABSORPTION-EDGE IN CADMIUM SELENIDE WITH DISLOCATIONS
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[5] INVESTIGATION OF THE ABSORPTION-EDGE OF AMORPHOUS-SILICON
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[6] ABSORPTION-EDGE OF AMORPHOUS BATIO-3
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[7] ABSORPTION-EDGE OF GERMANIUM IRRADIATED WITH FAST-NEUTRONS
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[8] ABSORPTION-EDGE OF COMPENSATED GERMANIUM IN DIRECT TRANSITION REGION
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[9] EXPONENTIAL ABSORPTION-EDGE IN HYDROGENATED A-SI FILMS
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[10] TEMPERATURE DEPENDENCE OF ABSORPTION-EDGE IN SOME AMORPHOUS SEMICONDUCTORS
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