PREPARATION OF OHMIC CONTACTS TO N-GE BY DIFFUSION FROM AS-DOPED SIO2

被引：0
|
作者：
HOLMKENN.JW [1 ]
KU, TPC [1 ]
机构：
[1] UNIV CALIF,ELECT SCI & ENGN DEPT,LOS ANGELES,CA 90024
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 11期
关键词：
D O I：
10.1149/1.2403312
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：1602 / 1603
页数：2
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