STRAIN CHARACTERIZATION OF COSI2/N-SI0.9GE0.1/P-SI HETEROSTRUCTURES

被引：28
|
作者：
NUR, O
WILLANDER, M
RADAMSON, HH
SARDELA, MR
HANSSON, GV
PETERSSON, CS
MAEX, K
机构：
[1] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,SEMICOND PHYS GRP,S-58183 LINKOPING,SWEDEN
[2] ROYAL INST TECHNOL,DEPT SOLID STATE ELECTR,S-16421 KISTA,SWEDEN
[3] IMC,LOUVAIN,BELGIUM
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 04期
关键词：
D O I：
10.1063/1.111122
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the structural characterization of CoSi2/n-Si0.9Ge0.1/p-Si heterostructures. Silicon molecular beam epitaxy is combined with Co sputtering to obtain these structures. The strain in the Si1-xGex is investigated after the formation of the CoSi2 by using high-resolution x-ray diffraction mapping in reciprocal space and cross-sectional transmission electron microscopy. The results show that in order to keep the strain in Si1-xGex unaffected, a sacrificial Si layer is needed. It was possible to obtain transistor action, but with low-current gain (beta).
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页码：440 / 442
页数：3
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