THIN-LAYERS OF GALLIUM-ARSENIDE - A MOLECULAR-ORBITAL STUDY

被引：6
|
作者：
BOCA, R
BENKOVSKY, I
BENCO, L
机构：
[1] SLOVAK UNIV TECHNOL BRATISLAVA, DEPT MICROELECTR, CS-81219 BRATISLAVA, CZECHOSLOVAKIA
[2] SLOVAK ACAD SCI, INST INORGAN, CS-84235 BRATISLAVA, CZECHOSLOVAKIA
来源：
CZECHOSLOVAK JOURNAL OF PHYSICS | 1992年 / 42卷 / 10期
关键词：
D O I：
10.1007/BF01589538
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The quasirelativistic INDO/1 method has been used to generate molecular orbitals for some {GaAs}n clusters up to 160 atoms. On the basis of these one-electron energy levels the density of states (DOS) and density of hole functions have been calculated. Various projections of DOS functions are discussed. The calculations are compared with those generated by periodic crystal orbitals of the EHT quality and with experimental ESCA spectra on thin layers of GaAs.
引用
收藏
页码：1005 / 1013
页数：9
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