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- [6] TEMPERATURE DEPENDENCES OF THE INDIRECT BAND-GAP OF IN1-XGAXP AND GAAS1-YPY SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (05): : 576 - 577
- [7] PHOTO-LUMINESCENCE OF GAAS1-XSBX AND GA1-XINXAS (X-LESS-THAN-0.01) SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (01): : 68 - 72
- [9] CALCULATION OF BOND LENGTH IN GA1-XINXAS TERNARY SEMICONDUCTORS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (04): : L208 - L210