SUBSTRATE EFFECT ON THE LATTICE-CONSTANTS OF THE MBE-GROWN IN1-XGAXAS AND GASB1-YASY

We have analyzed the lattice constants of InAs and GaSb grown on GaAs using molecular beam expitaxy (MBE). The observed deviations between the MBE and bulk samples, especially for GaSb, can be largely accounted for by the thermal stress induced in the films. Our analysis indicates that a similar thermal stress could cause APP 1STH 20% variation in alloy compositions of In//1// minus //xGa//xAs required to match the lattices of two GaSb//1// minus //yAs//y films which have the same y but are separately grown on GaAs and GaSb substrates.