HIGH-QUALITY LPE GROWTH OF INGAASP-INP DH LASER WAFERS UNDER A PH3 AMBIENT

被引：15
|
作者：
TAKAHASHI, S
NAGAI, H
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1981年 / 51卷 / 03期
关键词：
D O I：
10.1016/0022-0248(81)90430-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：502 / 508
页数：7
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