SELF-ALIGNED MOLYBDENUM GATE MOS-FETS

被引：0
|
作者：
SINGH, A
机构：
来源：
INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 1981年 / 19卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：707 / 710
页数：4
相关论文
共 50 条
  • [1] SELF-ALIGNED MOLYBDENUM GATE MOS-FETs.
    Singh, Awatar
    Indian Journal of Pure and Applied Physics, 1981, 19 (08): : 707 - 710
  • [2] REFRACTORY SELF-ALIGNED GATE TECHNOLOGY FOR GAAS MICROWAVE FETS AND MMICS
    GEISSBERGER, AE
    SADLER, RA
    GRIFFIN, EL
    BAHL, IJ
    BALZAN, ML
    ELECTRONICS LETTERS, 1987, 23 (20) : 1073 - 1075
  • [3] APPLICATION OF TUNGSTEN SILICIDE SELF-ALIGNED GATE TO GAAS-FETS
    KAO, JC
    WU, OKT
    SWANSON, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : C221 - C221
  • [4] REFRACTORY SELF-ALIGNED GATE TECHNOLOGY FOR GAAS MICROWAVE-POWER FETS
    GEISSBERGER, AE
    SADLER, RA
    GRIFFIN, EL
    BALZAN, ML
    BAHL, I
    DILLEY, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : C579 - C580
  • [5] Implementation of fully self-aligned bottom-gate MOS transistor
    Zhang, SD
    Han, RQ
    Zhang, ZK
    Huang, R
    Ko, PK
    Chan, MS
    IEEE ELECTRON DEVICE LETTERS, 2002, 23 (10) : 618 - 620
  • [6] Trenching observed during sidewall formation in GaAs self-aligned refractory gate FETs
    Baca, AG
    Howard, AJ
    Shul, RJ
    Sherwin, ME
    ELECTRONICS LETTERS, 1996, 32 (01) : 73 - 74
  • [7] FABRICATION AND CHARACTERISTICS OF MOS-FETS INCORPORATING ANODIC ALUMINUM-OXIDE IN GATE STRUCTURE
    RAYMOND, RK
    DAS, MB
    SOLID-STATE ELECTRONICS, 1976, 19 (03) : 181 - &
  • [8] SELF-ALIGNED PHOSPHORUS DOPED POLYSILICON GATE MOS DEVICE RADIATION HARDENING
    CHANG, CP
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1702 - 1706
  • [9] SHORT CHANNEL, LOW-NOISE UHF MOS-FETS UTILIZING MOLYBDENUM-GATE MASKED ION-IMPLANTATION
    OKABE, T
    OCHI, S
    KURONO, H
    KAGAMI, JI
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 : 201 - 206
  • [10] SHORT CHANNEL MOS FETS FABRICATED BY SELF-ALIGNED ION-IMPLANTATION AND LASER ANNEALING
    MIYAO, M
    KOYANAGI, M
    TAMURA, H
    HASHIMOTO, N
    TOKUYAMA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 129 - 132
12345