LATTICE LOCATION OF TE IN LASER-ANNEALED TE-IMPLANTED SILICON

被引：43

作者：

FOTI, G ^{[1
]}

CAMPISANO, SU ^{[1
]}

RIMINI, E ^{[1
]}

VITALI, G ^{[1
]}

机构：

[1] IST FIS INGN, I-100100 ROMA, ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 04期

关键词：

D O I：

10.1063/1.325068

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Backscattering of a 2.0-MeV He+ ion beam and channeling-effect techniques have been used to investigate the lattice location of Te in laser-annealed Te-implanted silicon. After Q-switched ruby-laser irradiation, an attenuation of 85% has been found in the Te signal for beam incidence along the 〈111〉 and the 〈110〉 axes of a Si crystal implanted with 400-keV Te to a dose of 1015 ions/cm2. The damaged amorphous layer recrystallizes completely after a 50-MW/cm2 pulse of 50-nsec duration for 〈111〉-oriented specimens; a lower power density is sufficient for 〈100〉 specimens. The Te profile broadens and shows accumulation at the Si surface for a power density of 60 MW/cm2 on a 〈100〉 specimen.

引用

页码：2569 / 2571

页数：3

共 15 条

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