DENSITY-FUNCTIONAL APPROACH TO METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS

被引：44

作者：

GHAZALI, A

LEROUXHUGON, P

机构：

来源：

PHYSICAL REVIEW LETTERS | 1978年 / 41卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.41.1569

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1569 / 1572

页数：4

共 50 条

[1] DENSITY-FUNCTIONAL APPROACH TO THE METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS
GHAZALI, A
LEROUXHUGON, P
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 275 - 275
[2] DENSITY-FUNCTIONAL THEORY OF THE METAL-INSULATOR-TRANSITION
ROSE, JH
SHORE, HB
SANDER, LM
PHYSICAL REVIEW B, 1980, 21 (08): : 3037 - 3042
[3] METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS
JAROSZYNSKI, J
ACTA PHYSICA POLONICA A, 1991, 80 (02) : 255 - 265
[4] METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS
MOTT, NF
DAVIES, JH
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (06): : 845 - 858
[5] STRESS DEPENDENCE OF THE METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS
BHATT, RN
PHYSICAL REVIEW B, 1982, 26 (02): : 1082 - 1085
[6] HYSTERESIS PHENOMENA NEAR THE METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS
MIKHEEV, VM
FIZIKA TVERDOGO TELA, 1994, 36 (04): : 994 - 1001
[7] ANALYSIS OF THE PRETRANSITION RANGE OF THE METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS
NEUMARK, GF
PHYSICAL REVIEW B, 1979, 20 (04): : 1519 - 1526
[8] POLARIZABILITY ENHANCEMENT IN DOPED SEMICONDUCTORS NEAR THE METAL-INSULATOR-TRANSITION
AGASSI, D
PHYSICAL REVIEW B, 1980, 22 (06): : 2803 - 2815
[9] POLARIZABILITY ENHANCEMENT IN DOPED SEMICONDUCTORS NEAR THE METAL-INSULATOR-TRANSITION
AGASSI, D
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 337 - 337
[10] METAL-INSULATOR-TRANSITION IN SEMIMAGNETIC SEMICONDUCTORS
WOJTOWICZ, T
DIETL, T
SAWICKI, M
PLESIEWICZ, W
JAROSZYNSKI, J
PHYSICAL REVIEW LETTERS, 1986, 56 (22) : 2419 - 2422

← 1 2 3 4 5 →