CALCULATED ENERGY-DISTRIBUTIONS OF ELECTRONS EMITTED FROM NEGATIVE ELECTRON AFFINITY GAAS-CS-O SURFACES

被引：58

作者：

ESCHER, JS ^{[1
]}

SCHADE, H ^{[1
]}

机构：

[1] RCA LABS,DAVID SARNOFF RES CTR,ELECTR COMPONENTS DIV,PRINCETON,NJ 08540

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 12期

关键词：

D O I：

10.1063/1.1662148

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5309 / 5313

页数：5

共 19 条

[1] IMPROVED GAAS TRANSMISSION PHOTOCATHODE [J].

ALLENSON, MB ;

ROWLAND, MC ;

STEWARD, GJ ;

SYMS, CHA ;

KING, PGR .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (10) :L89-&

[2] OPERATION OF III-V SEMICONDUCTOR PHOTOCATHODES IN SEMITRANSPARENT MODE [J].

ANTYPAS, GA ;

JAMES, LW ;

UEBBING, JJ .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :2888-&

[3] HOT-ELECTRON EMISSION FROM SHALLO P-N JUNCTIONS IN SILICON [J].

BARTELINK, D ;

MOLL, JL ;

MEYER, NI .

PHYSICAL REVIEW, 1963, 130 (03) :972-+

[4] 3-5 COMPOUND PHOTOCATHODES - A NEW FAMILY OF PHOTOEMITTERS WITH GREATLY IMPROVED PERFORMANCE [J].

BELL, RL ;

SPICER, WE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11) :1788-+

[5] EXPERIMENTAL EVIDENCE FOR OPTICAL POPULATION OF X MINIMA IN GAAS [J].

EDEN, RC ;

MOLL, JL ;

SPICER, WE .

PHYSICAL REVIEW LETTERS, 1967, 18 (15) :597-&

[6] PHOTOELECTRON SURFACE ESCAPE PROBABILITY OF (GA,IN)AS-CS-O IN 0.9 TO - 1.6 MUM RANGE [J].

FISHER, DG ;

ENSTROM, RE ;

ESCHER, JS ;

WILLIAMS, BF .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3815-&

[7]

GOLDSTEIN B, PRIVATE COMMUNICATIO

[8] DEPENDENCE ON CRYSTALLINE FACE OF BAND BENDING IN CS2 O-ACTIVATED GAAS [J].

JAMES, LW ;

ANTYPAS, GA ;

EDGECUMBE, J ;

MOON, RL ;

BELL, RL .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :4976-+

[9] TRANSPORT PROPERTIES OF GAAS OBTAINED FROM PHOTOEMISSION MEASUREMENTS [J].

JAMES, LW ;

MOLL, JL .

PHYSICAL REVIEW, 1969, 183 (03) :740-&

[10]

KOHN ES, 1973, IEEE T ELECTRON DEVI, VED20, P321

← 1 2 →