共 50 条
- [1] STRUCTURE OF ELECTROREFLECTION SPECTRA OF DOPED SEMICONDUCTORS ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1971, A 26 (12): : 2039 - +
- [2] MODIFICATION OF THE STRUCTURE AND ELECTRICAL ACTIVATION OF AN IMPURITY BY NANOSECOND LASER ANNEALING OF IMPLANTATION-DOPED SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (01): : 49 - 51
- [3] Strain conservation in implantation-doped GeSi layers on Si(100) Metals and Materials, 1997, 3 : 97 - 102
- [4] ELECTROREFLECTION SPECTRA OF SURFACE OF ION-BOMBARDED SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (04): : 460 - 464
- [5] Strain conservation in implantation-doped GeSi layers on Si(100) METALS AND MATERIALS-KOREA, 1997, 3 (02): : 97 - 102
- [6] RADIATIVE RECOMBINATION IN INDIUM ARSENIDE IMPLANTATION-DOPED WITH GROUP-4 ELEMENTS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (05): : 591 - 592
- [7] INVESTIGATION OF ELECTROLUMINESCENCE OF ALPHA-SIC CRYSTALS IMPLANTATION-DOPED WITH BORON, ALUMINUM, AND GALLIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (07): : 820 - 822
- [9] DOUBLE INJECTION OF CARRIERS IN A P-I-N STRUCTURE MADE OF IMPLANTATION-DOPED DIAMOND SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (03): : 290 - 293