ORIGIN OF 1/F3/2 NOISE IN GAAS THIN-FILM RESISTORS AND MESFET

被引：21
|
作者：
POUYSEGUR, M [1 ]
GRAFFEUIL, J [1 ]
CAZAUX, JL [1 ]
机构：
[1] UNIV PAUL SABATIER,F-31079 TOULOUSE,FRANCE
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 10期
关键词：
D O I：
10.1109/T-ED.1987.23214
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2178 / 2184
页数：7
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