14 GHZ LOW-POWER HIGHLY SENSITIVE STATIC FREQUENCY-DIVIDER USING QUANTUM-WELL ALGAAS/GAAS/ALGAAS FET TECHNOLOGY

被引：0
|
作者：
WENNEKERS, P
HUELSMANN, A
KAUFEL, G
KOEHLER, K
RAYNOR, B
SCHNEIDER, J
机构：
[1] Fraunhofer-Institute for Applied Solid State Physics, Freiburg
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 13期
关键词：
FIELD-EFFECT TRANSISTORS; SEMICONDUCTOR DEVICES;
D O I：
10.1049/el:19910732
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 14GHz static frequency divider has been fabricated using an enhancement/depletion 0.3-mu-m recessed-gate AlGaAs/GaAs/AlGaAs quantum well FET process. The divider has a power dissipation of 35 mW at a supply voltage of 1.80 V. The minimum input power for dividing operation is 8.3 dBm at a maximum input frequency of 14.2 GHz, which is lowered to -6.2 dBm, when operating at 12.0 GHz.
引用
收藏
页码：1173 / 1175
页数：3
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