Crack formation in tensile strained III-V epilayers grown on InP substrates

被引：0
|
作者：
Murray, RT [1 ]
Kiely, CJ [1 ]
Hopkinson, M [1 ]
Goodhew, PJ [1 ]
机构：
[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 | 1995年 / 146卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Layers of In-x(GaAl)(1-x)As with x<0.53 grown on InP(001) are under tension. Beyond a critical thickness, governed by the lattice misfit, such layers prefer to relieve their stored energy by crack formation. In this paper, experimental observations of this critical thickness over a range of misfits are compared with the predictions of a simple theory. Measurements of crack profiles and separations have allowed us to estimate the amount of stored elastic energy in such layers and explain why cracks penetrate beyond the epilayer into the substrate.
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页码：207 / 210
页数：4
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