EFFECT OF PRESSURE ON RAMAN SHIFT IN GE

被引:16
作者
ASAUMI, K
MINOMURA, S
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D O I
10.1143/JPSJ.45.1061
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O4 [物理学];
学科分类号
0702 ;
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页码:1061 / 1062
页数:2
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[1]   CALCULATION OF THERMAL EXPANSION OF GERMANIUM [J].
BIENENSTOCK, A .
PHILOSOPHICAL MAGAZINE, 1964, 9 (101) :755-&
[2]  
BUCHENAUER CJ, 1971, 2ND P INT C LIGHT SC, P280
[3]   STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J].
CERDEIRA, F ;
BUCHENAUER, CJ ;
CARDONA, M ;
POLLAK, FH .
PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :580-+
[4]   THERMODYNAMIC AND OPTICAL PROPERTIES OF GERMANIUM SILICON DIAMOND AND GALLIUM ARSENIDE [J].
DOLLING, G ;
COWLEY, RA .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 88 (560P) :463-+
[5]   CRYSTAL STRUCTURES AT HIGH PRESSURES OF METALLIC MODIFICATIONS OF SILICON AND GERMANIUM [J].
JAMIESON, JC .
SCIENCE, 1963, 139 (355) :762-&
[6]   CRYSTAL STRUCTURES OF NEW FORMS OF SILICON + GERMANIUM [J].
KASPER, JS ;
RICHARDS, SM .
ACTA CRYSTALLOGRAPHICA, 1964, 17 (06) :752-&
[7]   RAMAN SCATTERING FROM PHONONS IN POLYMORPHS OF SI AND GE [J].
KOBLISKA, RJ ;
CHANG, RK ;
ALBEN, R ;
THORPE, MF ;
WEAIRE, D ;
SELDERS, M ;
SOLIN, SA .
PHYSICAL REVIEW LETTERS, 1972, 29 (11) :725-&
[8]   PRESSURE INDUCED PHASE TRANSITIONS IN SILICON, GERMANIUM AND SOME 3-5 COMPOUNDS [J].
MINOMURA, S ;
DRICKAMER, HG .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (MAY) :451-&
[9]   RAMAN SCATTERING BY SILICON AND GERMANIUM [J].
PARKER, JH ;
FELDMAN, DW ;
ASHKIN, M .
PHYSICAL REVIEW, 1967, 155 (03) :712-&