EFFECT OF CONFINING LAYER ALUMINUM COMPOSITION ON ALGAAS-GAAS-INGAAS STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURE LASERS

被引：14
|
作者：
YORK, PK [1 ]
LANGSJOEN, SM [1 ]
MILLER, LM [1 ]
BEERNINK, KJ [1 ]
ALWAN, JJ [1 ]
COLEMAN, JJ [1 ]
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 09期
关键词：
D O I：
10.1063/1.103408
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Data are presented on laser threshold current density and emission wavelength of strained-layer InGaAs-GaAs-AlxGa1-xAs single quantum well lasers having confining layer aluminum compositions in the range 0.20≤x≤0.85. A decrease in threshold current density with increasing confining layer composition is related to the increased confinement factor of the waveguide structure. An increase in the laser emission wavelength is observed as a consequence of reduced bandfilling.
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页码：843 / 845
页数：3
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