SULFUR INCORPORATION IN UNDOPED HIGH-PURITY N-TYPE GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：0
|
作者：
LEE, B
KIM, MH
BOSE, SS
STILLMAN, GE
LARKINS, EC
HELLMAN, ES
SCHLOM, DG
HARRIS, JS
机构：
来源：
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988 | 1989年
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D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
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页码：23 / 28
页数：6
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