AXIAL MICROSCOPIC DISTRIBUTION OF GROWN-IN DEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS

被引：47
|
作者：
UMENO, S
SADAMITSU, S
MURAKAMI, H
HOURAI, M
SUMITA, S
SHIGEMATSU, T
机构：
[1] Silicon Technology Center, Sumitomo Sitix Corp., Kishima-gun, Saga, 849-05, Kohoku
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 5B期
关键词：
SILICON; DEFECT; IR LIGHT SCATTERING TOMOGRAPHY; STRIATION; OXYGEN; MICROSCOPIC DISTRIBUTION; PREFERENTIAL ETCHING;
D O I：
10.1143/JJAP.32.L699
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The axial microscopic distribution of grown-in defects in Czochralski silicon was studied by means of IR light scattering tomography (LST) and preferential etching. IR scattering defects (defects observed with LST) were found to degrade the gate oxide integrity yield, and the axial density distribution of IR scattering defects and flow patterns (wedge-shaped etch patterns) fluctuated with oxygen concentration fluctuations along the growth axis. However, the defect density did not depend directly on oxygen concentration. It is considered that the formation of IR scattering defects is related to the solid-liquid intertace temperature fluctuations.
引用
收藏
页码：L699 / L702
页数：4
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