THE BEHAVIOR OF THERMAL DONORS GENERATION AND OXYGEN PRECIPITATION AT 650-DEGREES-C IN NEUTRON-IRRADIATED SILICON

被引：0
|
作者：
NEIMASH, VB [1 ]
POMOZOV, YV [1 ]
SHAKHOVTSOV, VI [1 ]
KABALDIN, AN [1 ]
MELNIK, VM [1 ]
TSMOTS, VM [1 ]
机构：
[1] DROGOBYCH PEDAGOG INST,SOLID STATE MICROELECTR MAT LAB,DROGOBYCH 293720,UKRAINE
来源：
UKRAINSKII FIZICHESKII ZHURNAL | 1994年 / 39卷 / 3-4期
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D O I：
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The influence of preliminary neutron irradiation (PNI) on oxygen precipitation and thermal donors (TD) generation in single crystals of Si at 660 degrees C is investigated by IR-spectroscopy and Half effect. It is shown that the influence of PNI on TD generation and oxygen disintegration falls when fluence rises. The decrease is TD generation rate was discovered in Si when radiation and thermal decomposition centres are introduced. The results are interpreted with taking into account the radiation defects annihilation at PNI and inhomogeneous distribution of oxygen in initial Si.
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页码：310 / 314
页数：5
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