THE SURFACE BAND-GAPS OF GE(001)2X1

被引：18
|
作者：
KIPP, L
MANZKE, R
SKIBOWSKI, M
机构：
[1] Institut für Experimentalphysik, Universität Kiel
来源：
SURFACE SCIENCE | 1992年 / 269卷 / 1 -3 pt B期
关键词：
D O I：
10.1016/0039-6028(92)91361-E
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Applying in-situ combination of angle-resolved photoemission and inverse photoemission spectroscopy on clean Ge(001)2 X 1 surfaces we determined the binding energies of occupied and unoccupied surface states associated with the surface dimer of the 2 X 1 reconstruction at the high symmetric points GAMMABAR, JBAR, J'BAR, 1/2JKBAR and KBAR of the surface Brillouin zone. Together with the experimentally determined valence band maximum the results will be compared on an absolute energy scale with recent surface band structure calculations.
引用
收藏
页码：854 / 859
页数：6
相关论文
共 50 条
  • [1] THE 2X1 RECONSTRUCTION OF THE GE(001) SURFACE
    FERNANDEZ, JC
    YANG, WS
    SHIH, HD
    JONA, F
    JEPSEN, DW
    MARCUS, PM
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (03): : L55 - L60
  • [2] Strained Ge overlayer on a Si(001)-(2X1) surface
    Kahng, SJ
    Ha, YH
    Moon, DW
    Kuk, Y
    PHYSICAL REVIEW B, 2000, 61 (16): : 10827 - 10831
  • [3] AN INTRINSIC METALLIC SURFACE-STATE ON GE(001) 2X1
    KIPP, L
    MANZKE, R
    SKIBOWSKI, M
    SOLID STATE COMMUNICATIONS, 1995, 93 (07) : 603 - 607
  • [4] OPTICAL ANISOTROPY OF GE(001)2X1
    WENTINK, DJ
    WORMEESTER, H
    DEBOEIJ, P
    WIJERS, C
    VANSILFHOUT, A
    SURFACE SCIENCE, 1992, 274 (02) : 270 - 276
  • [5] SURFACE-STATES ON CLEAN GE(001)2X1 SURFACES
    ZANDVLIET, HJW
    VANSILFHOUT, A
    SURFACE SCIENCE, 1989, 211 (1-3) : 544 - 551
  • [6] MIXED GE-SI DIMER GROWTH AT THE GE/SI(001)-(2X1) SURFACE
    PATTHEY, L
    BULLOCK, EL
    ABUKAWA, T
    KONO, S
    JOHANSSON, LSO
    PHYSICAL REVIEW LETTERS, 1995, 75 (13) : 2538 - 2541
  • [7] (310)-FACETING OF THE GE(001)2X1 SURFACE-INDUCED BY INDIUM
    GAI, Z
    JI, H
    HE, Y
    HU, C
    ZHAO, RG
    YANG, WS
    SURFACE SCIENCE, 1995, 338 (1-3) : L851 - L856
  • [8] Transmission electron diffraction determination of the Ge(001)-(2x1) surface structure
    CollazoDavila, C
    Grozea, D
    Landree, E
    Marks, LD
    SURFACE SCIENCE, 1997, 375 (2-3) : 293 - 301
  • [9] GE(001) GAS-SOURCE MOLECULAR-BEAM EPITAXY ON GE(001)2X1 AND SI(001)2X1 FROM GE2H6 - GROWTH-KINETICS AND SURFACE ROUGHENING
    BRAMBLETT, TR
    LU, Q
    LEE, NE
    TAYLOR, N
    HASAN, MA
    GREENE, JE
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (04) : 1504 - 1513
  • [10] (2x1)-(1x1) phase transition on Ge(001): Dimer breakup and surface roughening
    van Vroonhoven, E
    Zandvliet, HJW
    Poelsema, B
    PHYSICAL REVIEW LETTERS, 2003, 91 (11)
12345