PHOTOLUMINESCENCE SPECTRA OF ZN3P2-CD3P2 THIN-FILMS

被引：12
|
作者：
NAYAK, A
RAO, DR
机构：
[1] Materials Science Centre, Indian Institute of Technology
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 05期
关键词：
D O I：
10.1063/1.110779
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoluminescence (PL) spectra of electron beam evaporated (ZnxCd1-x)3P2 thin films with composition (x) equal to 0.0, 0.2, 0.4, 0.5, 0.8, and 1.0 have been recorded at 100 K. The radiative transitions associated with the different PL peaks are correlated considering the distribution of native defects which act either as acceptor (A)- or donor (D)-like centers. In the case of (Zn0.5Cd0.5)3P2 films, which showed some satellite structure, the emission at 0.92 eV is related to the DA pairs (associated phosphorous interstitials and vacancies) with the distance of separation estimated in the range of 10-30 angstrom.
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页码：592 / 593
页数：2
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