Investigation of Temperature Dependence for CNT Semiconductor in External Magnetic Field

被引:0
|
作者
Park, Jung-Il [1 ]
Lee, Haeng-Ki [2 ]
机构
[1] Kyungpook Natl Univ, Dept Phys, Nanophys & Technol Lab, Daegu 702701, South Korea
[2] Suseong Coll, Dept Radiotechnol, Daegu 706711, South Korea
来源
关键词
electron spin resonance (ESR); projection operator method (POM); carbon nanotube; zigzag; line-width; electron spin relaxation;
D O I
10.4283/JKMS.2012.22.3.073
中图分类号
O59 [应用物理学];
学科分类号
摘要
We calculated the electron spin resonance (ESR) line-profile function. The line-width of single-walled carbon nanotube (SWNT) was studied as a function of the temperature at a frequency of 9.5 GHz in the presence of external electromagnetic radiation. The temperature dependence of the line-widths is obtained with the projection operator method (POM) proposed by Argyres and Sigel. The scattering is little affected in the low-temperature region (T < 200 K). We conclude that the calculation process presented in this method is useful for optical transitions in SWNT.
引用
收藏
页码:73 / 78
页数:6
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