MAGNETOPOLARON EFFECT IN ONE-PHONON RESONANT RAMAN-SCATTERING FROM BULK SEMICONDUCTORS - FROHLICH INTERACTION

Magnetopolaron features in the spectra of resonant Raman scattering from bulk semiconductors are studied theoretically in the scattering configuration which allows for Frohlich interaction with the Raman phonon. We show that the theoretical treatment of scattering efficiency should include the vertex corrections to the electron-phonon and hole-phonon interaction in order to preserve the well-known dipole-forbidden nature of the scattering process. The fine balance between the electron and hole contributions to the scattering amplitude is grossly upset if the vertex corrections are neglected, resulting in a tremendous but unphysical increase of the scattering efficiency. The resonant profile for the scattering intensity is calculated as a function of the magnetic field. It shows the splitting characteristic of the magnetopolaron range.