METHOD FOR INCREASING THE RESOLUTION OF TRANSIENT CAPACITANCE SPECTROSCOPY OF DEEP LEVELS IN SEMICONDUCTORS

被引：0
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作者：
KECHEK, AG
KUZNETSOV, NI
LEBEDEV, AA
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来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1987年 / 21卷 / 12期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1351 / 1352
页数：2
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