EFFECT OF THIN-FILM STRESS AND OXYGEN PRECIPITATION ON WARPAGE BEHAVIOR OF LARGE DIAMETER CMOS P/P+(100) EPITAXIAL WAFERS

被引：0
|
作者：
BEAUCHAINE, D [1 ]
WIJARANAKULA, W [1 ]
MATLOCK, JH [1 ]
MOLLENKOPF, H [1 ]
机构：
[1] SEH AMER INC,VANCOUVER,WA 98662
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 03期
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
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页码：C112 / C112
页数：1
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