MINIMAL VARIATION OF DEFECT STRUCTURE DUE TO THE ORDER OF ROOM TEMPERATURE HYDROGEN ISOTOPE IMPLANTATION AND SELF-ION IRRADIATION IN NICKEL

被引:0
|
作者
Muntifering, Brittany [1 ,2 ]
Qu, Jianmin [2 ,3 ]
Hattar, Khalid [1 ]
机构
[1] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA
[2] Northwestern Univ, Evanston, IL 60208 USA
[3] Tufts Univ, Medford, MA 02155 USA
来源
MRS ADVANCES | 2016年 / 1卷 / 42期
关键词
D O I
10.1557/adv.2016.396
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The formation and stability of radiation-induced defects in structural materials in reactor environments significantly effects their integrity and performance. Hydrogen, which may be present in significant quantities in future reactors, may play an important role in defect evolution. To characterize the effect of hydrogen on cascade damage evolution, in-situ TEM self-ion irradiation and deuterium implantation was performed, both sequentially and concurrently, on nickel. This paper presents preliminary results characterizing dislocation loop formation and evolution during room temperature deuterium implantation and self-ion irradiation and the consequence of the sequence of irradiation. Hydrogen isotope implantation at room temperature appears to have little or no effect on the final dislocation loop structures that result from self-ion irradiation, regardless of the sequence of irradiation. Tilting experiments emphasize the importance of precise two-beam conditions for characterizing defect size and structure.
引用
收藏
页码:2887 / 2892
页数:6
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