SIGNAL SIMULATIONS FOR DOUBLE-SIDED SILICON STRIP DETECTORS

被引：17
|
作者：
LESLIE, J [1 ]
SEIDEN, A [1 ]
UNNO, Y [1 ]
机构：
[1] KEK,NATL LAB HIGH ENERGY PHYS,TSUKUBA,IBARAKI 305,JAPAN
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1993年 / 40卷 / 04期
关键词：
D O I：
10.1109/23.256616
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Signals resulting from the passage of minimum ionizing charged particles through double-sided silicon strip detectors are simulated, including the effects of Landau fluctuations and the drift of electrons and holes in the electric and magnetic fields inside the detector. Induced currents are integrated, shaped and discriminated after addition of random electrical noise, and the timing of signals is obtained. Using the results of many Monte Carlo generated events, efficiencies, position resolutions, and means are evaluated as functions of the threshold, the signal-to-noise ratio, the amplifier shaping time, and the data storage time-window.
引用
收藏
页码：557 / 562
页数：6
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