STARK-LADDER TRANSITIONS IN GAAS/ALGAAS SUPERLATTICES

被引:12
|
作者
YAMAGUCHI, M
MORIFUJI, M
KUBO, H
TANIGUCHI, K
HAMAGUCHI, C
GMACHL, C
GORNIK, E
机构
[1] VIENNA TECH UNIV,INST FESTKORPERELEKRON,A-1040 VIENNA,AUSTRIA
[2] TECH UNIV MUNICH,WALTER SCHOTTKY INST,W-8046 GARCHING,GERMANY
关键词
D O I
10.1016/0038-1101(94)90309-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electroreflectance measurements have been carried out in order to investigate Stark-ladder transitions in a GaAs(40 angstrom)/AlGaAs(20 angstrom) superlattice under various uniform electric fields, and compared with the transition energies calculated on the basis of a microscopic tight-binding description. The observed electroreflectance spectra in a wide range of energies (1.5-2.2 eV) shift in proportion to an applied electric field. The signals in the higher photon energy region (1.9-2.2 eV) indicate an existence of the transition from the spin-orbit split-off band in the valence band to the Wannier-Stark localization states in the conduction band. The assignment is supported by the tight-binding calculation. The resonant couplings of the localized states are also observed.
引用
收藏
页码:839 / 842
页数:4
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