P+-N HYPERABRUPT GAAS VARACTORS GROWN BY MOLECULAR-BEAM EPITAXY

被引：7
|
作者：
COVINGTON, DW
HICKLIN, WH
机构：
来源：
ELECTRONICS LETTERS | 1978年 / 14卷 / 24期
关键词：
D O I：
10.1049/el:19780509
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：752 / 753
页数：2
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